Excitonic transitions in GaAs-AlxGa1-xAs multiple quantum wells affected by interface roughness.

Dynamics of exciton transfer between the bound and the continuum states in GaAs-AlxGa1-xAs multiple quantum wells.

Experimentally observed two-exponential decay of excitonic transitions in GaAs-Al Gal — As multiple quantum wells has been successfully interpreted in terms of the exciton transfer between the continuum (free carriers) and the bound states. The calculation results obtained from this exciton-transfer model are in excellent agreement with experimental observations. The rates of the exciton transf...

Impact of Interface Roughness Scattering on the Performance of GaAs/AlxGa1-xAs Terahertz Quantum Cascade Lasers

We investigate the impact of interface roughness (IFR) scattering on the performance of a series of the state-of-the-art GaAs/AlxGa1−xAs terahertz quantum cascade lasers (THz-QCLs) through a calculation of the induced inhomogeneous broadening and intersubband scattering rates. Our analysis includes two GaAs/Al0.15Ga0.85As THz-QCL devices with measured maximum operating temperatures at Tmax = 17...

Nonparabolic band effects in GaAs/AlxGa1−xAs quantum dots and ultrathin quantum wells

We have investigated the optical properties of unstrained GaAs/AlxGa1−xAs quantum dot/well systems with the aim of studying the influence of confinement on the effective exciton mass, as determined from the photoluminescence line shift in high magnetic fields 50 T . The effective exciton mass is found to be more than twice the value for bulk GaAs. We attribute this to an enhanced nonparabolicit...

Free-carrier effect on exciton dynamics in GaAs/AlxGa1-xAs quantum wells.

Electronic structures of GaAs/AlxGa1-xAs quantum double rings

In the framework of effective mass envelope function theory, the electronic structures of GaAs/AlxGa1-xAs quantum double rings (QDRs) are studied. Our model can be used to calculate the electronic structures of quantum wells, wires, dots, and the single ring. In calculations, the effects due to the different effective masses of electrons and holes in GaAs and AlxGa1-xAs and the valence band mix...